ICCAS OpenIR
Low lying electronic states of HOCl cation: Ab initio calculations.
Mok, DKW; Yeung, AKT; Wang, DX; Chau, FT
2004-03-28
Source PublicationABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY
ISSN0065-7727
Volume227Pages:U1015-U1015
Indexed BySCI ; ISTP
Language英语
WOS IDWOS:000223655603375
PublisherAMER CHEMICAL SOC
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Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/82308
Collection中国科学院化学研究所
Affiliation1.Hong Kong Polytech Univ, Dept Appl Biol & Chem Technol, Kowloon, Hong Kong, Peoples R China
2.Chinese Acad Sci, Inst Chem, Beijing 100864, Peoples R China
Recommended Citation
GB/T 7714
Mok, DKW,Yeung, AKT,Wang, DX,et al. Low lying electronic states of HOCl cation: Ab initio calculations.[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY,2004,227:U1015-U1015.
APA Mok, DKW,Yeung, AKT,Wang, DX,&Chau, FT.(2004).Low lying electronic states of HOCl cation: Ab initio calculations..ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY,227,U1015-U1015.
MLA Mok, DKW,et al."Low lying electronic states of HOCl cation: Ab initio calculations.".ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY 227(2004):U1015-U1015.
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