ICCAS OpenIR
Ordered pattern formation from dewetting of polymer thin film with surface disturbance by capillary force lithography
Luo, CX; Xing, RB; Han, YC
2004-03-10
Source PublicationSURFACE SCIENCE
ISSN0039-6028
Volume552Issue:1-3Pages:139-148
AbstractThe dewetting process of thin polystyrene (PS) film with built-in ordered disturbance by capillary force lithography (CFL) has. been investigated in situ by AFM. Two different phenomena are observed depending on the excess surface energy (DeltaF(gamma)) of the system. When DeltaF(gamma) is less than a certain critical value (i.e., the disturbance amplitude is under a critical value), the PS film would be flattened and become stable finally by heating above T-g. While, if the size of the disturbance amplitude is larger than the critical value, ordered PS liquid droplets form by further dewetting. The pattern formation mechanisms and influencing factors have been discussed in detail. (C) 2004 Elsevier B.V. All rights reserved.
KeywordWetting Atomic Force Microscopy Capillary Waves Aromatics
DOI10.1016/j.susc.2004.01.042
Indexed BySCI
Language英语
WOS IDWOS:000220123000018
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:46[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/81802
Collection中国科学院化学研究所
Corresponding AuthorHan, YC
AffiliationChinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
Recommended Citation
GB/T 7714
Luo, CX,Xing, RB,Han, YC. Ordered pattern formation from dewetting of polymer thin film with surface disturbance by capillary force lithography[J]. SURFACE SCIENCE,2004,552(1-3):139-148.
APA Luo, CX,Xing, RB,&Han, YC.(2004).Ordered pattern formation from dewetting of polymer thin film with surface disturbance by capillary force lithography.SURFACE SCIENCE,552(1-3),139-148.
MLA Luo, CX,et al."Ordered pattern formation from dewetting of polymer thin film with surface disturbance by capillary force lithography".SURFACE SCIENCE 552.1-3(2004):139-148.
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