ICCAS OpenIR
High performance field-effect transistors made of a multiwall CNx/C nanotube intramolecular junction
Xiao, K; Liu, YQ; Hu, PG; Yu, G; Fu, L; Zhu, DB
2003-12-08
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume83Issue:23Pages:4824-4826
AbstractField-effect transistors (FETs) based on an individual CNx/C nanotube (NT) were fabricated by focus ion-beam technology. The nanotube transistors exhibited n-type semiconductor characteristics, and the conductance of nanotube FETs can be modulated more than four orders of magnitude at room temperature. The electron mobility of a CNx/C NT FET estimated from its transconductance was as high as 3.84x10(3) cm(2)/V s. The n-type gate modulation could be explained as due the effect of bending of the valence band in the Schottky-barrier junction. (C) 2003 American Institute of Physics.
DOI10.1063/1.1633015
Indexed BySCI
Language英语
WOS IDWOS:000186970200046
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:19[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/81250
Collection中国科学院化学研究所
Corresponding AuthorZhu, DB
AffiliationChinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China
Recommended Citation
GB/T 7714
Xiao, K,Liu, YQ,Hu, PG,et al. High performance field-effect transistors made of a multiwall CNx/C nanotube intramolecular junction[J]. APPLIED PHYSICS LETTERS,2003,83(23):4824-4826.
APA Xiao, K,Liu, YQ,Hu, PG,Yu, G,Fu, L,&Zhu, DB.(2003).High performance field-effect transistors made of a multiwall CNx/C nanotube intramolecular junction.APPLIED PHYSICS LETTERS,83(23),4824-4826.
MLA Xiao, K,et al."High performance field-effect transistors made of a multiwall CNx/C nanotube intramolecular junction".APPLIED PHYSICS LETTERS 83.23(2003):4824-4826.
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