ICCAS OpenIR
Ga2O3 nanoribbons: Synthesis, characterization, and electronic properties
Fu, L; Liu, YQ; Hu, P; Xiao, K; Yu, G; Zhu, DB
2003-11-04
Source PublicationCHEMISTRY OF MATERIALS
ISSN0897-4756
Volume15Issue:22Pages:4287-4291
AbstractSemiconductive Ga2O3 nanoribbons have been synthesized via hydrogen-assisted thermal evaporation at 1000 degreesC. The width of the nanoribbons could be controlled by adjusting the content of hydrogen in a mixture of carrier gases. The room-temperature photoluminescence spectrum reveals that there exists a strong blue emission band centered at 430 nm. The blue emission is mainly attributed to the oxygen vacancies in the Ga2O3 nanoribbons. We have fabricated a Schottky junction diode, utilizing individual Ga2O3 nanoribbons, and studied its electrical transport properties. The measured current-voltage characteristic exhibited clear rectifying behavior with a turn-on voltage of 0.5 V and a rectification ratio of 2.5 x 10(4) at +/-2 V.
DOI10.1021/cm0343655
Indexed BySCI
Language英语
WOS IDWOS:000186317000022
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:84[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/80674
Collection中国科学院化学研究所
Corresponding AuthorLiu, YQ
AffiliationChinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China
Recommended Citation
GB/T 7714
Fu, L,Liu, YQ,Hu, P,et al. Ga2O3 nanoribbons: Synthesis, characterization, and electronic properties[J]. CHEMISTRY OF MATERIALS,2003,15(22):4287-4291.
APA Fu, L,Liu, YQ,Hu, P,Xiao, K,Yu, G,&Zhu, DB.(2003).Ga2O3 nanoribbons: Synthesis, characterization, and electronic properties.CHEMISTRY OF MATERIALS,15(22),4287-4291.
MLA Fu, L,et al."Ga2O3 nanoribbons: Synthesis, characterization, and electronic properties".CHEMISTRY OF MATERIALS 15.22(2003):4287-4291.
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