ICCAS OpenIR
High-mobility thin-film transistors based on aligned carbon nanotubes
Xiao, K; Liu, YQ; Hu, PA; Yu, G; Wang, XB; Zhu, DB
2003-07-07
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume83Issue:1Pages:150-152
AbstractThin-film transistors based on aligned carbon nanotubes (CNTs) were fabricated by directly growing highly ordered CNTs on silicon dioxide surface. The transistor shows a pronounced field effect. Electric transport through the aligned carbon nanotubes is dominated by the holes at room temperature. A hole mobility (mu(p)) of the CNT thin-film transistor was estimated to be as high as 61.6 cm(2)/V s. Such a mobility is comparable to that of heavily doped n-Si and is larger than individual CNT field-effect transistor. Thus, it reveals a potential application of the aligned CNTs in electronics. (C) 2003 American Institute of Physics.
DOI10.1063/1.1589181
Indexed BySCI
Language英语
WOS IDWOS:000183877800051
PublisherAMER INST PHYSICS
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Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/80458
Collection中国科学院化学研究所
Corresponding AuthorLiu, YQ
AffiliationChinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China
Recommended Citation
GB/T 7714
Xiao, K,Liu, YQ,Hu, PA,et al. High-mobility thin-film transistors based on aligned carbon nanotubes[J]. APPLIED PHYSICS LETTERS,2003,83(1):150-152.
APA Xiao, K,Liu, YQ,Hu, PA,Yu, G,Wang, XB,&Zhu, DB.(2003).High-mobility thin-film transistors based on aligned carbon nanotubes.APPLIED PHYSICS LETTERS,83(1),150-152.
MLA Xiao, K,et al."High-mobility thin-film transistors based on aligned carbon nanotubes".APPLIED PHYSICS LETTERS 83.1(2003):150-152.
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