ICCAS OpenIR
Preparation of ZnO thin film by sol-gel technique and its properties
Zang, JC; Gong, F; Yan, JH; Shan, BR; Ye, JP; Liu, M
2003-12-01
Source PublicationRARE METAL MATERIALS AND ENGINEERING
ISSN1002-185X
Volume32Pages:564-567
AbstractZnO thin films were prepared on Na-Ca-Si glass substrate (microscope slides) by Sol-Gel process, and the mechanism of ZnO thin film prepared by Sol-Gel technique was discussed by DTA for the first time. The thin film was analyzed by SEM, XRD and UVS. The results showed that the thin film with strongly preferred orientation of C-axis perpendicular to the substrate surface was the crystalline phase of hexagonal wurtzite. Its surface was homogenous, dense and crack-free. The thin film was composed of plentiful asteroid crystal, the size of which is 10 nmsimilar to30 nm approximately. The transmittance of the thin film in visible region was above 90%. The results also showed that the thickness of single dip-coating was about 75 nm. The wavelength 414 nm emission was observed in ZnO thin film, being excited with 313 nm light beam.
KeywordSol-gel Process Zno Thin Film Fluorescence
Indexed BySCI
Language英语
WOS IDWOS:000223266400149
PublisherNORTHWEST INST NONFERROUS METAL RESEARCH
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/80042
Collection中国科学院化学研究所
Corresponding AuthorZang, JC
Affiliation1.Beijing Univ Technol, Beijing 100022, Peoples R China
2.Chinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China
Recommended Citation
GB/T 7714
Zang, JC,Gong, F,Yan, JH,et al. Preparation of ZnO thin film by sol-gel technique and its properties[J]. RARE METAL MATERIALS AND ENGINEERING,2003,32:564-567.
APA Zang, JC,Gong, F,Yan, JH,Shan, BR,Ye, JP,&Liu, M.(2003).Preparation of ZnO thin film by sol-gel technique and its properties.RARE METAL MATERIALS AND ENGINEERING,32,564-567.
MLA Zang, JC,et al."Preparation of ZnO thin film by sol-gel technique and its properties".RARE METAL MATERIALS AND ENGINEERING 32(2003):564-567.
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