ICCAS OpenIR
Thermal annealing induced high performance light-emitting diodes based on poly(9,9 '-dioctyl fluorene)
He, GF; Li, YF; Guo, TF; Yang, Y
2003-04-04
Source PublicationSYNTHETIC METALS
ISSN0379-6779
Volume137Issue:1-3Pages:1091-1092
AbstractPoly(9,9'-dioctyl fluorene) was used as an emitting material in the light-emitting diodes. After annealing at a high temperature, such as 100degreesC, the device shows higher performance than the controlled device. This may be attributed to the surface structures and polymer morphology. UV-vis and photoluminescence spectra were used to study the phase and photophysical characteristics. Also, reflection-absorption Fourier-transform infrared spectroscopy (RA-FTIR) has been performed on the samples to investigate how the device performance was influenced.
KeywordLight-emitting Diodes Polymer Ftir Electroluminescence Efficiency
DOI10.1016/S0379-6779(02)01135-9
Indexed ByISTP ; SCI
Language英语
WOS IDWOS:000182533900109
PublisherELSEVIER SCIENCE SA
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/79742
Collection中国科学院化学研究所
Corresponding AuthorLi, YF
Affiliation1.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Ctr Mol Sci, Beijing 100080, Peoples R China
2.Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
Recommended Citation
GB/T 7714
He, GF,Li, YF,Guo, TF,et al. Thermal annealing induced high performance light-emitting diodes based on poly(9,9 '-dioctyl fluorene)[J]. SYNTHETIC METALS,2003,137(1-3):1091-1092.
APA He, GF,Li, YF,Guo, TF,&Yang, Y.(2003).Thermal annealing induced high performance light-emitting diodes based on poly(9,9 '-dioctyl fluorene).SYNTHETIC METALS,137(1-3),1091-1092.
MLA He, GF,et al."Thermal annealing induced high performance light-emitting diodes based on poly(9,9 '-dioctyl fluorene)".SYNTHETIC METALS 137.1-3(2003):1091-1092.
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