ICCAS OpenIR
Topographical, compositional and schottky characterization of PtSi/Si schottky diodes
Li, MC; Zhao, LC; Liu, DG; Chen, XK
2003-06-26
Source PublicationMATERIALS CHEMISTRY AND PHYSICS
ISSN0254-0584
Volume80Issue:3Pages:620-624
AbstractPtSi ultra-thin films were grown on Si-wafer using pulsed laser deposition (PLD). As determined from X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), the compositional structures of the PtSi were discussed. Furthermore, the surface structure of these films was studied by atomic force microscopy (AFM). A possible growth mechanism is presented, on studying the variation of morphological features (i.e., roughness and size of crystallites) with annealing temperature and films thickness. In addition, by the AFM studies and schottky characterization measurements of PtSi films forming during various annealing processing, preferable preparing conditions are proposed to form the continuous and smooth PtSi thin film on Si substrate by PLD. (C) 2003 Elsevier Science B.V. All rights reserved.
KeywordPulsed Laser Deposition Atomic Force Microscopy Nanometer Thin Film Ptsi
DOI10.1016/S0254-0584(03)00090-7
Indexed BySCI
Language英语
WOS IDWOS:000182968500010
PublisherELSEVIER SCIENCE SA
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Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/79728
Collection中国科学院化学研究所
Corresponding AuthorLi, MC
Affiliation1.Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
2.Chinese Acad Sci, Inst Chem, STM Lab, Beijing 100080, Peoples R China
3.Lanzhou Inst Phys, Lab Laser Mol Beam Epitaxy, Lanzhou, Peoples R China
Recommended Citation
GB/T 7714
Li, MC,Zhao, LC,Liu, DG,et al. Topographical, compositional and schottky characterization of PtSi/Si schottky diodes[J]. MATERIALS CHEMISTRY AND PHYSICS,2003,80(3):620-624.
APA Li, MC,Zhao, LC,Liu, DG,&Chen, XK.(2003).Topographical, compositional and schottky characterization of PtSi/Si schottky diodes.MATERIALS CHEMISTRY AND PHYSICS,80(3),620-624.
MLA Li, MC,et al."Topographical, compositional and schottky characterization of PtSi/Si schottky diodes".MATERIALS CHEMISTRY AND PHYSICS 80.3(2003):620-624.
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