ICCAS OpenIR
Boundary effect of relief structure on crystallization of diblock copolymer in thin films
Zhang, FJ; Chen, YZ; Huang, HY; Hu, ZJ; He, TB
2003-07-08
Source PublicationLANGMUIR
ISSN0743-7463
Volume19Issue:14Pages:5563-5566
AbstractIn this Letter, crystal growth of a symmetric crystalline-amorphous diblock copolymer, poly(styrene-b-epsilon-caprolactone) (PS-b-PCL), in thin films was investigated by atomic force microscopy (AFM), Relief structures of holes and islands were formed during annealing the film at the molten state, and the in situ observation of subsequent crystal growth at room temperature indicated that the crystals were preferred to occur at the edge of holes or islands and grew into the interior area. It was concluded that the stretched PCL blocks at the edge of relief structures, caused by material transportation or deformation of the interface, could act as nucleation agents during polymer crystallization. The crystal growth rate of individual lamellae varied both from lamellae to lamellae and in time, but the area occupied by crystals increased constantly with time. At 22 degreesC, the growth rate was 1.2 x 10(-2) mum(2)/min with the scan size 2 x 2 mum(2).
DOI10.1021/la034162v
Indexed BySCI
Language英语
WOS IDWOS:000183994400003
PublisherAMER CHEMICAL SOC
Citation statistics
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/79716
Collection中国科学院化学研究所
Corresponding AuthorZhang, FJ
AffiliationChinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Jilin, Peoples R China
Recommended Citation
GB/T 7714
Zhang, FJ,Chen, YZ,Huang, HY,et al. Boundary effect of relief structure on crystallization of diblock copolymer in thin films[J]. LANGMUIR,2003,19(14):5563-5566.
APA Zhang, FJ,Chen, YZ,Huang, HY,Hu, ZJ,&He, TB.(2003).Boundary effect of relief structure on crystallization of diblock copolymer in thin films.LANGMUIR,19(14),5563-5566.
MLA Zhang, FJ,et al."Boundary effect of relief structure on crystallization of diblock copolymer in thin films".LANGMUIR 19.14(2003):5563-5566.
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