ICCAS OpenIR
SiCN thin film prepared at room temperature by r.f. reactive sputtering
Wu, XC; Cai, RQ; Yan, PX; Liu, WM; Tian, J
2002-01-15
Source PublicationAPPLIED SURFACE SCIENCE
ISSN0169-4332
Volume185Issue:3-4Pages:262-266
AbstractSilicon-carbon nitride (SiCN) thin films were deposited on Si substrate at room temperature by r.f. reactive sputtering. Fourier transform infrared spectroscopy (FTIR), optical absorption spectra (alpha(lambda)) and electrical conductivity (sigma) were studied for the thin films. The effect of the annealing on IR and sigma was investigated at different temperatures. IR analysis indicates that Si-H, C-N, Si-C, Si-N, C-N and CdropN bonds are present in a-SiCN:H films. A shift of the stretching mode for Si-H bond to the high-wavenumber side is observed with increasing the nitrogen flow ratio gamma(N2) (=N-2/(Ar + H-2 + N-2 + CH4)). The shift is from 2000 to 2190 cm(-1) when gamma(N2) = 13.7%. The study shows that the film structure and optical and electrical properties are obviously modified readily by controlling the process parameters of deposition. The improvement in the film properties, e.g., good thermal stability, is explained mainly in terms of the cross-linked structure between the Si, C and N atoms. (C) 2002 Elsevier Science B.V. All rights reserved.
KeywordSicn Thin Film Room Temperature R.f. Reactive Sputtering
Indexed BySCI
Language英语
WOS IDWOS:000173623300014
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:49[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/79384
Collection中国科学院化学研究所
Corresponding AuthorYan, PX
Affiliation1.Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China
2.Chinese Acad Sci, Inst Chem & Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
Recommended Citation
GB/T 7714
Wu, XC,Cai, RQ,Yan, PX,et al. SiCN thin film prepared at room temperature by r.f. reactive sputtering[J]. APPLIED SURFACE SCIENCE,2002,185(3-4):262-266.
APA Wu, XC,Cai, RQ,Yan, PX,Liu, WM,&Tian, J.(2002).SiCN thin film prepared at room temperature by r.f. reactive sputtering.APPLIED SURFACE SCIENCE,185(3-4),262-266.
MLA Wu, XC,et al."SiCN thin film prepared at room temperature by r.f. reactive sputtering".APPLIED SURFACE SCIENCE 185.3-4(2002):262-266.
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