Nanolithographic modification of diamond
Kondo, T; Yanagisawa, M; Jiang, L; Tryk, DA; Fujishima, A
AbstractElectrical bias-induced nanolithographic modification of the as-deposited surface of boron-doped homoepitaxial diamond films was demonstrated by use of atomic force microscopy in the surface modification (SM) mode and measured in the current mapping (CM) mode. The SM mode involves a higher bias voltage, greater than +2 V, sample vs. gold-coated cantilever tip, than that used for the CM mode. In this way, very small features, e.g. lines 20-30 nm in width, were produced. The main characteristic of these features was extremely low-apparent conductivity. This phenomenon is due principally to a conversion of the hydrogen-terminated, as-deposited surface to an oxygen-terminated surface, thereby increasing the Schottky barrier height significantly. The SM mechanism most likely involves a tip-induced electrochemical oxidation process, i.e. anodization, with water from the humid atmosphere acting as the electrolyte, as in the similar, well-known process on silicon surfaces. (C) 2002 Elsevier Science B.V. All rights reserved.
KeywordHomoepitaxy Diamond Films Atomic Force Microscopy Electrical Properties
Indexed BySCI
WOS IDWOS:000178402200009
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Document Type期刊论文
Corresponding AuthorFujishima, A
Affiliation1.Univ Tokyo, Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
2.Chinese Acad Sci, Inst Chem, Mol Sci Res Ctr, Beijing 100080, Peoples R China
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GB/T 7714
Kondo, T,Yanagisawa, M,Jiang, L,et al. Nanolithographic modification of diamond[J]. DIAMOND AND RELATED MATERIALS,2002,11(10):1788-1796.
APA Kondo, T,Yanagisawa, M,Jiang, L,Tryk, DA,&Fujishima, A.(2002).Nanolithographic modification of diamond.DIAMOND AND RELATED MATERIALS,11(10),1788-1796.
MLA Kondo, T,et al."Nanolithographic modification of diamond".DIAMOND AND RELATED MATERIALS 11.10(2002):1788-1796.
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