ICCAS OpenIR
Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode
Liu, Y; Xiao, XR; Zeng, YP
2000-06-01
Source PublicationELECTROCHEMISTRY COMMUNICATIONS
ISSN1388-2481
Volume2Issue:6Pages:404-406
AbstractA novel composite InxGa1-xAs/GaAs/GaAs/AlxGa1-xAs multiple quantum well material with different well widths was studied as a new kind of photoelectrode in a photoelectrochemical cell. The photocurrent spectrum and photocurrent-electrode potential curve were measured in ferrocene nonaqueous solution. Pronounced quantization effects and strong exciton absorption were observed in the photocurrent spectrum. The effects of surface states and interfacial states on the photocurrent-electrode potential curve are discussed. (C) 2000 Elsevier Science S.A. All rights reserved.
KeywordMultiple Quantum Well Electrode Quantization Effect Exciton Transition Photocurrent Spectrum Photoelectrochemical Cell
Indexed BySCI
Language英语
WOS IDWOS:000087331300007
PublisherELSEVIER SCIENCE INC
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Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/76034
Collection中国科学院化学研究所
Corresponding AuthorXiao, XR
Affiliation1.Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100101, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Liu, Y,Xiao, XR,Zeng, YP. Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode[J]. ELECTROCHEMISTRY COMMUNICATIONS,2000,2(6):404-406.
APA Liu, Y,Xiao, XR,&Zeng, YP.(2000).Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode.ELECTROCHEMISTRY COMMUNICATIONS,2(6),404-406.
MLA Liu, Y,et al."Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode".ELECTROCHEMISTRY COMMUNICATIONS 2.6(2000):404-406.
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