ICCAS OpenIR
Preparation of Tb3+-ion-doped Si-based light-emitting materials with sol-gel method
Xie, DT; Wu, JG; Ma, G; Yan, WF; Zhou, WJ; Xu, GX; Xu, DF; Tao, J; Qin, GG
1999-09-01
Source PublicationACTA PHYSICA SINICA
ISSN1000-3290
Volume48Issue:9Pages:1773-1780
AbstractBy sol-gel process and appropriate heat treatment, Tb3+-doped light-emitting films were prepared on the silicon bases. The structural changes of the xerogels and the fluorescence properties of the Tb3+ ions doped were studied by photoluminescence, Fourier transformed infrared spectroscopy, atom force microscope, differential thermal analysis and thermal gravimetry analysis methods. The results show that the films doped with Tb3+ ions can produce photoluminescence at 545 nm at room temperature after 400 degrees C heating-treatment, and have good properties in 10(-6) m level. The concentration of the Tb3+ ions doped reached 10(19)/cm(3).
Indexed BySCI
Language英语
WOS IDWOS:000082386800028
PublisherCHINESE PHYSICAL SOC
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/75556
Collection中国科学院化学研究所
Corresponding AuthorXie, DT
Affiliation1.Peking Univ, State Key Lab Rare Earth Mat Chem & Applicat, Beijing 100871, Peoples R China
2.Chinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China
3.Peking Univ, Dept Phys, Beijing 100871, Peoples R China
Recommended Citation
GB/T 7714
Xie, DT,Wu, JG,Ma, G,et al. Preparation of Tb3+-ion-doped Si-based light-emitting materials with sol-gel method[J]. ACTA PHYSICA SINICA,1999,48(9):1773-1780.
APA Xie, DT.,Wu, JG.,Ma, G.,Yan, WF.,Zhou, WJ.,...&Qin, GG.(1999).Preparation of Tb3+-ion-doped Si-based light-emitting materials with sol-gel method.ACTA PHYSICA SINICA,48(9),1773-1780.
MLA Xie, DT,et al."Preparation of Tb3+-ion-doped Si-based light-emitting materials with sol-gel method".ACTA PHYSICA SINICA 48.9(1999):1773-1780.
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