ICCAS OpenIR
Surface morphology and electrochemical properties of highly boron-doped homoepitaxial diamond films
Yanagisawa, M; Jiang, L; Tryk, DA; Hashimoto, K; Fujishima, A
1999-11-01
Source PublicationDIAMOND AND RELATED MATERIALS
ISSN0925-9635
Volume8Issue:11Pages:2059-2063
AbstractHighly boron-doped diamond films were grown on (100) diamond substrates that were mechanically repolished at an off-axis angle of 4 degrees with respect to the (100) surface, tilted toward the [110] direction. The surface morphology and crystallinity were examined with atomic force microscopy, and it was found that the deposited surfaces have high crystallinity, with steps running parallel to the [110] direction. The terrace width was similar to 30 nm. Atomic resolution images obtained on these terraces showed a disordered atomic arrangement, with no evidence for the 2 x 1 or 1 x 2 reconstruction usually observed for non-doped samples, suggesting that the high level of boron doping affects the surface structure. The electrochemical behavior of the films showed a wide working potential window and low capacitance. (C) 1999 Elsevier Science S.A. All rights reserved.
KeywordBoron Diamond Films Doping Electrochemistry Homoepitaxy Morphology Surfaces
Indexed BySCI
Language英语
WOS IDWOS:000084591500009
PublisherELSEVIER SCIENCE SA
Citation statistics
Cited Times:20[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/75368
Collection中国科学院化学研究所
Corresponding AuthorFujishima, A
Affiliation1.Univ Tokyo, Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
2.Chinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China
3.Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan
Recommended Citation
GB/T 7714
Yanagisawa, M,Jiang, L,Tryk, DA,et al. Surface morphology and electrochemical properties of highly boron-doped homoepitaxial diamond films[J]. DIAMOND AND RELATED MATERIALS,1999,8(11):2059-2063.
APA Yanagisawa, M,Jiang, L,Tryk, DA,Hashimoto, K,&Fujishima, A.(1999).Surface morphology and electrochemical properties of highly boron-doped homoepitaxial diamond films.DIAMOND AND RELATED MATERIALS,8(11),2059-2063.
MLA Yanagisawa, M,et al."Surface morphology and electrochemical properties of highly boron-doped homoepitaxial diamond films".DIAMOND AND RELATED MATERIALS 8.11(1999):2059-2063.
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