ICCAS OpenIR
Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes
Liu, Y; Xiao, XR; Zeng, YP; Pan, D
1999-11-25
Source PublicationJOURNAL OF PHYSICAL CHEMISTRY B
ISSN1520-6106
Volume103Issue:47Pages:10421-10424
AbstractThe photovoltaic spectral features and the behaviors of photocurrent versus the electrode potential for near surface In0.15Ga0.85As/GaAs quantum well electrodes have been investigated in nonaqueous solutions of ferrocene and acetylferrocene. The photovoltaic spectrum shows a sharp structure that reflects confined state-to-state exciton transition in the quantum well. Deep dips are observed in the photocurrent versus the electrode potential curves in both electrolytes at the different electrode potentials under the illumination of exciton resonance wavelength. These dips are qualitatively explained by considering the interfacial tunneling transfer of photogenerated electron within the quantum well.
Indexed BySCI
Language英语
WOS IDWOS:000084010100016
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/75118
Collection中国科学院化学研究所
Corresponding AuthorXiao, XR
Affiliation1.Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Lab Photochem, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
Recommended Citation
GB/T 7714
Liu, Y,Xiao, XR,Zeng, YP,et al. Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes[J]. JOURNAL OF PHYSICAL CHEMISTRY B,1999,103(47):10421-10424.
APA Liu, Y,Xiao, XR,Zeng, YP,&Pan, D.(1999).Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes.JOURNAL OF PHYSICAL CHEMISTRY B,103(47),10421-10424.
MLA Liu, Y,et al."Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes".JOURNAL OF PHYSICAL CHEMISTRY B 103.47(1999):10421-10424.
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