ICCAS OpenIR
Heterojunction diodes of soluble conducting polypyrrole with porous silicon
Shen, YQ; Wan, MX
1998-12-04
Source PublicationSYNTHETIC METALS
ISSN0379-6779
Volume98Issue:2Pages:147-152
AbstractThe heterojunction diodes made between porous silicon (PS) and soluble polypyrrole (PPy), Au/PPy-PS/Al cell were fabricated. Compared to PS Schottky diodes, the rectifying characteristics of Au/PPy-PS/Al diodes were significantly improved. Moreover, it was found that the rectifying characteristics of the heterojunction diodes were strongly dependent of the doping degree, dopants and solvents for the doped PPy films. It was also noted that decreasing oxidation of PS exposed to air is an effective role to improve the rectifying characteristics of the diodes. (C) 1998 Published by Elsevier Science S.A. All rights reserved.
KeywordPolypyrrole Porous Silicon Heterojunction Diodes
Indexed BySCI
Language英语
WOS IDWOS:000077636400011
PublisherELSEVIER SCIENCE SA
Citation statistics
Cited Times:25[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/74720
Collection中国科学院化学研究所
Corresponding AuthorShen, YQ
AffiliationChinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China
Recommended Citation
GB/T 7714
Shen, YQ,Wan, MX. Heterojunction diodes of soluble conducting polypyrrole with porous silicon[J]. SYNTHETIC METALS,1998,98(2):147-152.
APA Shen, YQ,&Wan, MX.(1998).Heterojunction diodes of soluble conducting polypyrrole with porous silicon.SYNTHETIC METALS,98(2),147-152.
MLA Shen, YQ,et al."Heterojunction diodes of soluble conducting polypyrrole with porous silicon".SYNTHETIC METALS 98.2(1998):147-152.
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