ICCAS OpenIR
Use of ballistic electron emission microscopy to observe the diversity of fabricated nanometer features at the Au/Si interface
Qiu, X; Shang, G; Wang, C; Bai, C
1998-03-01
Source PublicationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN0947-8396
Volume66Pages:S91-S94
AbstractThis paper examines the feasibility of locally modifying the interface properties of the gold/silicon system using ballistic electron emission microscopy (BEEM). Distinctly different fabricated features have been observed in BEEM images of the Au/Si interface depending on the polarity of the applied voltage pulses. The discrepancy that exists in the modification behavior on specific samples may reveal that the previously proposed adatom terraces and atomic interdiffusion mechanisms are not sufficient to account for all of the observations here.
Indexed ByISTP ; SCI
Language英语
WOS IDWOS:000076887000020
PublisherSPRINGER VERLAG
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/74528
Collection中国科学院化学研究所
Corresponding AuthorBai, C
AffiliationChinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China
Recommended Citation
GB/T 7714
Qiu, X,Shang, G,Wang, C,et al. Use of ballistic electron emission microscopy to observe the diversity of fabricated nanometer features at the Au/Si interface[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,1998,66:S91-S94.
APA Qiu, X,Shang, G,Wang, C,&Bai, C.(1998).Use of ballistic electron emission microscopy to observe the diversity of fabricated nanometer features at the Au/Si interface.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,66,S91-S94.
MLA Qiu, X,et al."Use of ballistic electron emission microscopy to observe the diversity of fabricated nanometer features at the Au/Si interface".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 66(1998):S91-S94.
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