ICCAS OpenIR
Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy
Gong, Q; Liang, JB; Xu, B; Ding, D; Li, HX; Jiang, C; Zhou, W; Liu, FQ; Wang, ZG; Qiu, XH; Shang, GY; Bai, CL
1998-09-01
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume192Issue:3-4Pages:376-380
AbstractAtomic force microscopy (AFM) measurements of nanometer-sized islands formed by 2 monolayers of InAs by molecular beam epitaxy have been carried out and the scan line of individual islands was extracted from raw AFM data for investigation. It is found that the base widths of nanometer-sized islands obtained by AFM are not reliable due to the finite size and shape of the contacting probe. A simple model is proposed to analyze the deviation of the measured value From the real value of the base width of InAs islands. (C) 1998 Elsevier Science B.V. All rights reserved.
KeywordNanometer Island Inas Molecular Beam Epitaxy Atomic Force Microscopy Quantum Dot
Indexed BySCI
Language英语
WOS IDWOS:000075840000003
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:15[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/74290
Collection中国科学院化学研究所
Corresponding AuthorGong, Q
Affiliation1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Inst Chem, Beijing 100082, Peoples R China
Recommended Citation
GB/T 7714
Gong, Q,Liang, JB,Xu, B,et al. Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,1998,192(3-4):376-380.
APA Gong, Q.,Liang, JB.,Xu, B.,Ding, D.,Li, HX.,...&Bai, CL.(1998).Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,192(3-4),376-380.
MLA Gong, Q,et al."Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 192.3-4(1998):376-380.
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