Porous polyaniline films with high conductivity
Li, WG; Wan, MX
Source PublicationSYNTHETIC METALS
AbstractPorous polyaniline (PANI) films with high conductivity at room temperature have been prepared by a new method called 'doping-dedoping-redoping'. The room-temperature conductivity of the resulting PANI films doped with HCl, HClO4, H2SO4, H3PO4 and p-toluene sulfonic acid (p-TSA), can reach 200-300 S cm(-1), which is comparable with the results of PANI films doped with camphor sulfonic acid (CSA) in m-cresol. It has been demonstrated that the resulting PANI chains still keep the expanded conformation like PANI-CSA in m-cresol, which may be why high room-temperature conductivity can be obtained by this new method. Moreover, the electrical and mechanical properties of the resulting PANI films have been measured as a function of the protonation state, temperature and dopants. (C) 1998 Elsevier Science S.A.
KeywordDoping Porous Polyaniline
Indexed BySCI
WOS IDWOS:000071977400005
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Cited Times:75[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Corresponding AuthorWan, MX
AffiliationChinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China
Recommended Citation
GB/T 7714
Li, WG,Wan, MX. Porous polyaniline films with high conductivity[J]. SYNTHETIC METALS,1998,92(2):121-126.
APA Li, WG,&Wan, MX.(1998).Porous polyaniline films with high conductivity.SYNTHETIC METALS,92(2),121-126.
MLA Li, WG,et al."Porous polyaniline films with high conductivity".SYNTHETIC METALS 92.2(1998):121-126.
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