ICCAS OpenIR
Highly sensitive gas sensor enhanced by tuning the surface potential
Wang, Xiujin; Ji, Shiliang; Wang, Haibo; Yan, Donghang1
2011-12-01
Source PublicationORGANIC ELECTRONICS
ISSN1566-1199
Volume12Issue:12Pages:2230-2235
AbstractWe report a heterojunction gas sensor with an enhanced relative response to nitrogen dioxide (NO(2)) below 5 ppm and a detection limit down to 250 ppb at room temperature. The 1.8 nm titanyl phthalocyanine (TiOPc) film as bottom layer with 1 nm hexadecafluorinated copper phthalocyanine (F(16)CuPc) film as top layer has constructed an ultrathin bilayer sensor device. Kelvin probe force microscopy (KPFM) results indicated that p-n heterojunction was formed at the interface. The top layer has formed local electron accumulating area and made the film more reductive to analyte. The top layer acts as extra surface active sites in addition to the grain boundaries and these heterostructures can adsorb analytes more effectively. (C) 2011 Elsevier B.V. All rights reserved.
KeywordGas Sensor Heterojunction Surface Potential Kelvin Probe Force Microscopy
DOI10.1016/j.orgel.2011.09.014
Indexed BySCI
Language英语
WOS IDWOS:000297259700038
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:16[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/73568
Collection中国科学院化学研究所
Corresponding AuthorYan, Donghang
Affiliation1.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
Recommended Citation
GB/T 7714
Wang, Xiujin,Ji, Shiliang,Wang, Haibo,et al. Highly sensitive gas sensor enhanced by tuning the surface potential[J]. ORGANIC ELECTRONICS,2011,12(12):2230-2235.
APA Wang, Xiujin,Ji, Shiliang,Wang, Haibo,&Yan, Donghang.(2011).Highly sensitive gas sensor enhanced by tuning the surface potential.ORGANIC ELECTRONICS,12(12),2230-2235.
MLA Wang, Xiujin,et al."Highly sensitive gas sensor enhanced by tuning the surface potential".ORGANIC ELECTRONICS 12.12(2011):2230-2235.
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