ICCAS OpenIR
Low-Voltage Organic Nonvolatile Thin-Film Transistor Memory Based on a P(MMA-GMA)-Al-O Complex Layer
Wang, Wei1; Ma, Dongge2
2011-03-01
Source PublicationIEEE ELECTRON DEVICE LETTERS
ISSN0741-3106
Volume32Issue:3Pages:405-407
AbstractAn organic nonvolatile thin-film transistor memory is demonstrated by an inset complex layer between the active layer and the gate dielectric layer, which is realized by heat treating a thin Al layer (2.5 nm) on polymer poly(methyl methacrylate co glycidyl methacrylate) in an oven. The memory window and the memory ratio have a prominent dependence on the V(GS) sweeping rate, with the largest values of 13.3 V and 2010 which can be obtained at the rate of -0.2 V/S. At a low programming/erasing voltage of +/- 15 V, the transistors exhibit excellent memory circle characteristics and long data retention property. At last, the possible operation mechanisms of present transistor memories are discussed.
KeywordLow Voltage Nonvolatile Memory Organic Thin-film Transistor (Otft)
DOI10.1109/LED.2010.2103297
Indexed BySCI
Language英语
WOS IDWOS:000287658400061
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/73556
Collection中国科学院化学研究所
Corresponding AuthorWang, Wei
Affiliation1.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
Recommended Citation
GB/T 7714
Wang, Wei,Ma, Dongge. Low-Voltage Organic Nonvolatile Thin-Film Transistor Memory Based on a P(MMA-GMA)-Al-O Complex Layer[J]. IEEE ELECTRON DEVICE LETTERS,2011,32(3):405-407.
APA Wang, Wei,&Ma, Dongge.(2011).Low-Voltage Organic Nonvolatile Thin-Film Transistor Memory Based on a P(MMA-GMA)-Al-O Complex Layer.IEEE ELECTRON DEVICE LETTERS,32(3),405-407.
MLA Wang, Wei,et al."Low-Voltage Organic Nonvolatile Thin-Film Transistor Memory Based on a P(MMA-GMA)-Al-O Complex Layer".IEEE ELECTRON DEVICE LETTERS 32.3(2011):405-407.
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