ICCAS OpenIR
Ladder polysilsesquioxane for wide-band semiconductors: synthesis, optical properties and doped electrophosphorescent device
Ren, Zhongjie2; Chen, Zhize3; Fu, Wenxin3; Zhang, Rongben3; Shen, Fangzhong1; Wang, Feng2; Ma, Yuguang1; Yan, Shouke2
2011
Source PublicationJOURNAL OF MATERIALS CHEMISTRY
ISSN0959-9428
Volume21Issue:30Pages:11306-11311
AbstractA ladder polysilsesquioxane with side chain 3-methyl-1,5-diphenylbenzene groups (Tp-LPSQ) is synthesized successfully and confirmed by the MALDI-TOF MS, (29)Si-NMR and (1)H-NMR. DSC, TGA, AFM and PL spectra reveal its good film-forming property, high thermal and morphological stability and good miscibility to the dopant FIrpic. In addition, it also shows a high triplet energy and a wide bandgap. Thus Tp-LPSQ may act as a host for the blue light emitting iridium complex FIrpic. The electrophosphorescent device based on Tp-LPSQ as the active layer exhibits typical blue emission and the performance of device is superior to other reported polymeric host materials.
DOI10.1039/c1jm11087j
Indexed BySCI
Language英语
WOS IDWOS:000292974400037
PublisherROYAL SOC CHEMISTRY
Citation statistics
Cited Times:13[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/73198
Collection中国科学院化学研究所
Corresponding AuthorMa, Yuguang
Affiliation1.Jilin Univ, State Key Lab Supramol Struct & Mat, Changchun 130023, Peoples R China
2.Beijing Univ Chem Technol, State Key Lab Chem Resource Engn, Beijing, Peoples R China
3.Chinese Acad Sci, Inst Chem, BNLMS, Lab Polymer Sci & Mat, Beijing 100080, Peoples R China
Recommended Citation
GB/T 7714
Ren, Zhongjie,Chen, Zhize,Fu, Wenxin,et al. Ladder polysilsesquioxane for wide-band semiconductors: synthesis, optical properties and doped electrophosphorescent device[J]. JOURNAL OF MATERIALS CHEMISTRY,2011,21(30):11306-11311.
APA Ren, Zhongjie.,Chen, Zhize.,Fu, Wenxin.,Zhang, Rongben.,Shen, Fangzhong.,...&Yan, Shouke.(2011).Ladder polysilsesquioxane for wide-band semiconductors: synthesis, optical properties and doped electrophosphorescent device.JOURNAL OF MATERIALS CHEMISTRY,21(30),11306-11311.
MLA Ren, Zhongjie,et al."Ladder polysilsesquioxane for wide-band semiconductors: synthesis, optical properties and doped electrophosphorescent device".JOURNAL OF MATERIALS CHEMISTRY 21.30(2011):11306-11311.
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