ICCAS OpenIR
Morphology Optimization for the Fabrication of High Mobility Thin-Film Transistors
Sun, Xiangnan1,2; Zhang, Lei1,2; Di, Chong-an1; Wen, Yugeng1,2; Guo, Yunlong1; Zhao, Yan1,2; Yu, Gui1; Liu, Yunqi1
2011-07-26
Source PublicationADVANCED MATERIALS
ISSN0935-9648
Volume23Issue:28Pages:3128-+
AbstractA novel method to enhance the performance of pentacene thin-film transistors (TFTs) based on a blending polymeric dielectric is reported. By the inter-grain-enhancing process and the nucleation-controlling process, the morphology of pentacene has been optimized and the mobility of OTFT is enhanced up to 3.6 cm(2)/Vs. The mechanism of this technology is a "heterogeneity-employed" method, which is absolutely different from conventional "homogeneity-aimed" methods.
DOI10.1002/adma.201101178
Indexed BySCI
Language英语
WOS IDWOS:000294091700002
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Cited Times:43[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/73128
Collection中国科学院化学研究所
Corresponding AuthorLiu, Yunqi
Affiliation1.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
Recommended Citation
GB/T 7714
Sun, Xiangnan,Zhang, Lei,Di, Chong-an,et al. Morphology Optimization for the Fabrication of High Mobility Thin-Film Transistors[J]. ADVANCED MATERIALS,2011,23(28):3128-+.
APA Sun, Xiangnan.,Zhang, Lei.,Di, Chong-an.,Wen, Yugeng.,Guo, Yunlong.,...&Liu, Yunqi.(2011).Morphology Optimization for the Fabrication of High Mobility Thin-Film Transistors.ADVANCED MATERIALS,23(28),3128-+.
MLA Sun, Xiangnan,et al."Morphology Optimization for the Fabrication of High Mobility Thin-Film Transistors".ADVANCED MATERIALS 23.28(2011):3128-+.
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