ICCAS OpenIR
Highly Efficient Deep-Blue Electrophosphorescence Enabled by Solution-Processed Bipolar Tetraarylsilane Host with Both a High Triplet Energy and a High-Lying HOMO Level
Gong, Shaolong1; Fu, Qiang2; Wang, Qiang2; Yang, Chuluo1; Zhong, Cheng1; Qin, Jingui1; Ma, Dongge2
2011-11-09
Source PublicationADVANCED MATERIALS
ISSN0935-9648
Volume23Issue:42Pages:4956-4959
AbstractA new bipolar tetraarylsilane derivative with both a sufficiently high triplet energy and a high-lying highest occupied molecular orbital energy level is presented as an excellent host for the deep-blue phosphor. A solution-processed FIr6-based deep-blue phosphorescent organic light-emitting diode (PhOLED) is realized with high efficiency and low efficiency roll-off.
DOI10.1002/adma.201102758
Indexed BySCI
Language英语
WOS IDWOS:000297042000022
PublisherWILEY-BLACKWELL
Citation statistics
Cited Times:127[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/72278
Collection中国科学院化学研究所
Corresponding AuthorYang, Chuluo
Affiliation1.Wuhan Univ, Dept Chem, Hubei Key Lab Organ & Polymer Optoelect Mat, Wuhan 430072, Peoples R China
2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
Recommended Citation
GB/T 7714
Gong, Shaolong,Fu, Qiang,Wang, Qiang,et al. Highly Efficient Deep-Blue Electrophosphorescence Enabled by Solution-Processed Bipolar Tetraarylsilane Host with Both a High Triplet Energy and a High-Lying HOMO Level[J]. ADVANCED MATERIALS,2011,23(42):4956-4959.
APA Gong, Shaolong.,Fu, Qiang.,Wang, Qiang.,Yang, Chuluo.,Zhong, Cheng.,...&Ma, Dongge.(2011).Highly Efficient Deep-Blue Electrophosphorescence Enabled by Solution-Processed Bipolar Tetraarylsilane Host with Both a High Triplet Energy and a High-Lying HOMO Level.ADVANCED MATERIALS,23(42),4956-4959.
MLA Gong, Shaolong,et al."Highly Efficient Deep-Blue Electrophosphorescence Enabled by Solution-Processed Bipolar Tetraarylsilane Host with Both a High Triplet Energy and a High-Lying HOMO Level".ADVANCED MATERIALS 23.42(2011):4956-4959.
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