ICCAS OpenIR
Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene
Dai, Boya1; Fu, Lei1,2; Zou, Zhiyu2; Wang, Min1; Xu, Haitao3; Wang, Sheng3; Liu, Zhongfan1
2011-11-01
Source PublicationNATURE COMMUNICATIONS
ISSN2041-1723
Volume2
AbstractControlled growth of high-quality graphene is still the bottleneck of practical applications. The widely used chemical vapour deposition process generally suffers from an uncontrollable carbon precipitation effect that leads to inhomogeneous growth and strong correlation to the growth conditions. Here we report the rational design of a binary metal alloy that effectively suppresses the carbon precipitation process and activates a self-limited growth mechanism for homogeneous monolayer graphene. As demonstrated by an Ni-Mo alloy, the designed binary alloy contains an active catalyst component for carbon source decomposition and graphene growth and a black hole counterpart for trapping the dissolved carbons and forming stable metal carbides. This type of process engineering has been used to grow strictly single-layer graphene with 100% surface coverage and excellent tolerance to variations in growth conditions. With simplicity, scalability and a very large growth window, the presented approach may facilitate graphene research and industrial applications.
DOI10.1038/ncomms1539
Indexed BySCI
Language英语
WOS IDWOS:000297686500009
PublisherNATURE PUBLISHING GROUP
Citation statistics
Cited Times:165[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/72026
Collection中国科学院化学研究所
Corresponding AuthorLiu, Zhongfan
Affiliation1.Peking Univ, Ctr Nanochem CNC, Beijing Natl Lab Mol Sci,Coll Chem & Mol Engn, State Key Lab Struct Chem Unstable Stable Species, Beijing 100871, Peoples R China
2.Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China
3.Peking Univ, Dept Elect, Beijing 100871, Peoples R China
Recommended Citation
GB/T 7714
Dai, Boya,Fu, Lei,Zou, Zhiyu,et al. Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene[J]. NATURE COMMUNICATIONS,2011,2.
APA Dai, Boya.,Fu, Lei.,Zou, Zhiyu.,Wang, Min.,Xu, Haitao.,...&Liu, Zhongfan.(2011).Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene.NATURE COMMUNICATIONS,2.
MLA Dai, Boya,et al."Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene".NATURE COMMUNICATIONS 2(2011).
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Dai, Boya]'s Articles
[Fu, Lei]'s Articles
[Zou, Zhiyu]'s Articles
Baidu academic
Similar articles in Baidu academic
[Dai, Boya]'s Articles
[Fu, Lei]'s Articles
[Zou, Zhiyu]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Dai, Boya]'s Articles
[Fu, Lei]'s Articles
[Zou, Zhiyu]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.