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Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition
Yan, Kai; Peng, Hailin; Zhou, Yu; Li, Hui; Liu, Zhongfan
2011-03-01
Source PublicationNANO LETTERS
ISSN1530-6984
Volume11Issue:3Pages:1106-1110
AbstractWe report the epitaxial formation of bilayer Bernal graphene on copper foil via chemical vapor deposition. The self-limit effect of graphene growth on copper is broken through the introduction of a second growth process. The coverage of bilayer regions with Bernal stacking can be as high as 67% before further optimization. Facilitated with the transfer process to silicon/silicon oxide substrates, dual-gated graphene transistors of the as-grown bilayer Bernal graphene were fabricated, showing typical tunable transfer characteristics under varying gate voltages. The high-yield layer-by-layer epitaxy scheme will not only make this material easily accessible but reveal the fundamental mechanism of graphene growth on copper.
KeywordGraphene Bilayer Bernal Stacking Cvd Epitaxy Band Gap Opening
DOI10.1021/nl104000b
Indexed BySCI
Language英语
WOS IDWOS:000288061500033
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:263[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/71822
Collection中国科学院化学研究所
Corresponding AuthorLiu, Zhongfan
AffiliationPeking Univ, Coll Chem & Mol Engn, State Key Lab Struct Chem Unstable & Stable Speci, Ctr Nanochem,BNLMS, Beijing 100871, Peoples R China
Recommended Citation
GB/T 7714
Yan, Kai,Peng, Hailin,Zhou, Yu,et al. Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition[J]. NANO LETTERS,2011,11(3):1106-1110.
APA Yan, Kai,Peng, Hailin,Zhou, Yu,Li, Hui,&Liu, Zhongfan.(2011).Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition.NANO LETTERS,11(3),1106-1110.
MLA Yan, Kai,et al."Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition".NANO LETTERS 11.3(2011):1106-1110.
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