ICCAS OpenIR
Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes
Yi, Mingdong1,2; Zhao, Litao1,2,3; Fan, Quli1,2; Xia, Xianhai1,2; Ai, Wei1,2; Xie, Linghai1,2; Liu, Xiangmei1,2; Shi, Naien; Wang, Wenjun3; Wang, Yanping4; Huang, Wei1,2
2011-09-15
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume110Issue:6
AbstractWe demonstrated write-once-read-many-times (WORM) memory devices based on graphene oxide (GO) film sandwiched between ITO and LiF/Al electrode. The devices showed irreversible electrical transition from the low conductivity (OFF) state to the high conductivity (ON) state and the ON/OFF current ratio between the conductivities of two states was over 5.7 x 10(4). The results of I-V data, AFM and SEM images indicated that the WORM memory characteristics of GO diodes were mainly attributed to charge trapping at GO layers and interfacial properties between GO and LiF/Al electrode. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3639287]
DOI10.1063/1.3639287
Indexed BySCI
Language英语
WOS IDWOS:000295619300064
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:25[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/71804
Collection中国科学院化学研究所
Corresponding AuthorYi, Mingdong
Affiliation1.NUPT, KLOEID, Nanjing 210046, Peoples R China
2.NUPT, IAM, Nanjing 210046, Peoples R China
3.Liaocheng Univ, Sch Phys Sci & Informat Technol, Liaocheng 252059, Shandong, Peoples R China
4.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Grad Sch, Changchun 130022, Peoples R China
Recommended Citation
GB/T 7714
Yi, Mingdong,Zhao, Litao,Fan, Quli,et al. Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes[J]. JOURNAL OF APPLIED PHYSICS,2011,110(6).
APA Yi, Mingdong.,Zhao, Litao.,Fan, Quli.,Xia, Xianhai.,Ai, Wei.,...&Huang, Wei.(2011).Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes.JOURNAL OF APPLIED PHYSICS,110(6).
MLA Yi, Mingdong,et al."Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes".JOURNAL OF APPLIED PHYSICS 110.6(2011).
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