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XPS Study of the Thickness Nanosize Effect for Ultrathin SiO2 on Si Substrate
Zhao Zhi-Juan; Liu Fen; Zhao Liang-Zhong
2010-11-01
Source PublicationACTA PHYSICO-CHIMICA SINICA
ISSN1000-6818
Volume26Issue:11Pages:3030-3034
AbstractX-ray photoelectron spectroscopy (XPS) was used to record the Si 2p and valence band spectra for a series of ultrathin SiO2 on Si substrate with the oxide thickness (d) ranging from 1.45 to 7.2 nm. The thicknesses of these samples were measured precisely in the international key comparison. The results show that the samples with the oxide thickness of d<2 nm have a lower Si 2p binding energy (E-B). This has been attributed to the extra. atomic relaxation provided by both the polarization of the neighboring atoms of SiO2 and charge transfer from atoms of the Si substrate to the core holes created by photoionization (the screening distance was about (2.5 +/- 0.6) nm). The E-B of Si 2p increased when d>3 nm and in this case extra. atomic screening was provided by the polarization of the neighboring atoms of SiO2. The sample with a smaller d showed a higher E-B for Si 2p. The valence band structure is also related to the thickness nanosize effect. The samples with d<2 nm show a higher relative peak intensity of the O 2p non. bonding electrons and lower peak intensities for the O 2p-Si 3p and O 2p-Si 3s bonding electrons from SiO2.
KeywordSi Substrate Silicon Oxide Film Nanosize Thickness Size Effect X-ray Photoelectron Spectroscopy Electron Binding Energy Valence Band Spectrum Extra-atomic Relaxation
DOI10.3866/PKU.WHXB20101111
Indexed BySCI
Language英语
WOS IDWOS:000283648000025
PublisherPEKING UNIV PRESS
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/71094
Collection中国科学院化学研究所
Corresponding AuthorLiu Fen
AffiliationChinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Zhao Zhi-Juan,Liu Fen,Zhao Liang-Zhong. XPS Study of the Thickness Nanosize Effect for Ultrathin SiO2 on Si Substrate[J]. ACTA PHYSICO-CHIMICA SINICA,2010,26(11):3030-3034.
APA Zhao Zhi-Juan,Liu Fen,&Zhao Liang-Zhong.(2010).XPS Study of the Thickness Nanosize Effect for Ultrathin SiO2 on Si Substrate.ACTA PHYSICO-CHIMICA SINICA,26(11),3030-3034.
MLA Zhao Zhi-Juan,et al."XPS Study of the Thickness Nanosize Effect for Ultrathin SiO2 on Si Substrate".ACTA PHYSICO-CHIMICA SINICA 26.11(2010):3030-3034.
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