ICCAS OpenIR
Fabrication and characterization of molecular scale field-effect transistors
Cao, Lingchao1,2; Chen, Shiyan1; Wei, Dacheng1; Liu, Yunqi1; Fu, Lei1; Yu, Gui1; Liu, Hongming3; Liu, Xinyu3; Wu, Dexing3
2010
Source PublicationJOURNAL OF MATERIALS CHEMISTRY
ISSN0959-9428
Volume20Issue:12Pages:2305-2309
AbstractMolecular electronics are considered one of the most promising ways to meet the challenge of micro-electronics facing its scaling down pathway. Molecular devices, especially molecular scale field-effect transistors (MSFET), are key building blocks for molecular electronics. Three major hurdles to device fabrication are yet to be overcome: electrode pairs must be fabricated with a controllable gap size commensurate with the functional molecule size of interest; the molecules of interest must be arranged between the electrodes with precise location and orientation control; and stable, conducting contacts must be made between the molecules and the electrodes. We have combined "top-down'' and "bottom-up'' approaches to solve these problems. Using photolithography and molecular lithography with self-assembled mono/multiple molecule layer(s) as a resist, we fabricated electrode structures with a controllable molecular-scale gap between source and drain electrodes and a third terminal of a buried gate. For our device, we synthesized a thiolated phthalocyanine derivative molecule, {di-[1-(S-acetylthio)-4-ethynylphenyl]-di-(tert-butyl)phthalocyanato}copper(II), with acetylthio groups on both ends, conjugated with ethynylphenyl groups. The synthesized end-thiolated molecules were assembled between the tailored molecular gap of the as-fabricated FET electrode structures in solution via Au-S bonding, forming stable contacts between the electrodes and the molecules, and a 3 terminal MSFET device was formed. Electrical measurements show that the device has characteristics of a typical FET device. The field-effect mobility of the as-fabricated MS-FET is 0.16 cm(2) V(-1) s(-1).
DOI10.1039/b922958b
Indexed BySCI
Language英语
WOS IDWOS:000275380000005
PublisherROYAL SOC CHEMISTRY
Citation statistics
Cited Times:11[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/70932
Collection中国科学院化学研究所
Corresponding AuthorLiu, Yunqi
Affiliation1.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China
3.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
Recommended Citation
GB/T 7714
Cao, Lingchao,Chen, Shiyan,Wei, Dacheng,et al. Fabrication and characterization of molecular scale field-effect transistors[J]. JOURNAL OF MATERIALS CHEMISTRY,2010,20(12):2305-2309.
APA Cao, Lingchao.,Chen, Shiyan.,Wei, Dacheng.,Liu, Yunqi.,Fu, Lei.,...&Wu, Dexing.(2010).Fabrication and characterization of molecular scale field-effect transistors.JOURNAL OF MATERIALS CHEMISTRY,20(12),2305-2309.
MLA Cao, Lingchao,et al."Fabrication and characterization of molecular scale field-effect transistors".JOURNAL OF MATERIALS CHEMISTRY 20.12(2010):2305-2309.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Cao, Lingchao]'s Articles
[Chen, Shiyan]'s Articles
[Wei, Dacheng]'s Articles
Baidu academic
Similar articles in Baidu academic
[Cao, Lingchao]'s Articles
[Chen, Shiyan]'s Articles
[Wei, Dacheng]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Cao, Lingchao]'s Articles
[Chen, Shiyan]'s Articles
[Wei, Dacheng]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.