ICCAS OpenIR
High performance organic semiconductors for field-effect transistors
Dong, Huanli; Wang, Chengliang; Hu, Wenping
2010
Source PublicationCHEMICAL COMMUNICATIONS
ISSN1359-7345
Volume46Issue:29Pages:5211-5222
AbstractThe purpose of this feature article is to give an overview of recent advances in development of high performance organic semiconductors for field-effect transistors, especially those with mobility of/over amorphous silicon, since they are believed to be promising candidates with practical applications in the near future's organic electronic industry. We hope this comprehensive summary of high performance organic semiconductors will provide guidelines for the design and synthesis of novel, high performance organic field-effect semiconductors.
DOI10.1039/c0cc00947d
Indexed BySCI
Language英语
WOS IDWOS:000279911000002
PublisherROYAL SOC CHEMISTRY
Citation statistics
Cited Times:229[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/70760
Collection中国科学院化学研究所
Corresponding AuthorHu, Wenping
AffiliationChinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Dong, Huanli,Wang, Chengliang,Hu, Wenping. High performance organic semiconductors for field-effect transistors[J]. CHEMICAL COMMUNICATIONS,2010,46(29):5211-5222.
APA Dong, Huanli,Wang, Chengliang,&Hu, Wenping.(2010).High performance organic semiconductors for field-effect transistors.CHEMICAL COMMUNICATIONS,46(29),5211-5222.
MLA Dong, Huanli,et al."High performance organic semiconductors for field-effect transistors".CHEMICAL COMMUNICATIONS 46.29(2010):5211-5222.
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