ICCAS OpenIR
Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions
Wang He1,2; Li Chun-Hong1; Wang Li-Juan1; Wang Hai-Bo1; Yan Dong-Hang1
2010-02-01
Source PublicationCHINESE PHYSICS LETTERS
ISSN0256-307X
Volume27Issue:2
AbstractFlexible vanadyl-phthalocyanine (VOPc) thin-film transistors are fabricated by the weak epitaxy growth (WEG) method. The devices show a mobility of 0.5 cm(2)/Vs, an on/off ratio of 10(5) and a low leakage current of 10(-9) A. The performances exhibit strong dependence on bending conditions and reversible change can be found when the bending strain is less than 1.5%. This results from the change of the trap density calculated by subthreshold slopes. The results indicate that VOPc films fabricated by the WEG method have good durability to flexing and possess great potential in flexible electronics.
DOI10.1088/0256-307X/27/2/028502
Indexed BySCI
Language英语
WOS IDWOS:000274360800085
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/70112
Collection中国科学院化学研究所
Corresponding AuthorYan Dong-Hang
Affiliation1.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Wang He,Li Chun-Hong,Wang Li-Juan,et al. Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions[J]. CHINESE PHYSICS LETTERS,2010,27(2).
APA Wang He,Li Chun-Hong,Wang Li-Juan,Wang Hai-Bo,&Yan Dong-Hang.(2010).Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions.CHINESE PHYSICS LETTERS,27(2).
MLA Wang He,et al."Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions".CHINESE PHYSICS LETTERS 27.2(2010).
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