ICCAS OpenIR
Top-Gate Organic Thin-Film Transistors Constructed by a General Lamination Approach
Zhang, Lei1,2; Di, Chong-an1; Zhao, Yan1,2; Guo, Yunlong1,2; Sun, Xiangnan1,2; Wen, Yugeng1,2; Zhou, Weiyi1,2; Zhan, Xiaowei1; Yu, Gui1; Liu, Yunqi1
2010-08-24
Source PublicationADVANCED MATERIALS
ISSN0935-9648
Volume22Issue:32Pages:3537-+
AbstractThe lamination method, an effective way to fabricate multilayer devices, is successfully applied in the fabrication of top-gate organic thin-film transitors (OTFTs), especially the solution-processed devices. The fabricated top-gate devices exhibit both high performance and good stability.
DOI10.1002/adma.201000123
Indexed BySCI
Language英语
WOS IDWOS:000281692100005
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Cited Times:36[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/69838
Collection中国科学院化学研究所
Corresponding AuthorDi, Chong-an
Affiliation1.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Lei,Di, Chong-an,Zhao, Yan,et al. Top-Gate Organic Thin-Film Transistors Constructed by a General Lamination Approach[J]. ADVANCED MATERIALS,2010,22(32):3537-+.
APA Zhang, Lei.,Di, Chong-an.,Zhao, Yan.,Guo, Yunlong.,Sun, Xiangnan.,...&Liu, Yunqi.(2010).Top-Gate Organic Thin-Film Transistors Constructed by a General Lamination Approach.ADVANCED MATERIALS,22(32),3537-+.
MLA Zhang, Lei,et al."Top-Gate Organic Thin-Film Transistors Constructed by a General Lamination Approach".ADVANCED MATERIALS 22.32(2010):3537-+.
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