ICCAS OpenIR
Engineering of the dielectric-semiconductor interface in organic field-effect transistors
Sun, Xiangnan; Di, Chong-an; Liu, Yunqi
2010
Source PublicationJOURNAL OF MATERIALS CHEMISTRY
ISSN0959-9428
Volume20Issue:13Pages:2599-2611
AbstractWith the advances of organic field-effect transistors (OFETs), the interface between semiconductors and dielectrics has received much attention due to its dramatic effects on the morphology and charge-transport of organic semiconductors in OFETs. The purpose of this review is to give an overview of the recent progress in the engineering of the dielectric-semiconductor interface in OFETs. The interface-dependent performances of OFETs are reviewed, and interfacial control methods are especially dealt with an aim to solve interfacial effects. Finally, novel applications of the dielectric-semiconductor interface for achieving multifunctions are summarized to offer a clear map of interface engineering in OFETs.
DOI10.1039/b921449f
Indexed BySCI
Language英语
WOS IDWOS:000275662400009
PublisherROYAL SOC CHEMISTRY
Citation statistics
Cited Times:94[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/68772
Collection中国科学院化学研究所
Corresponding AuthorLiu, Yunqi
AffiliationChinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Sun, Xiangnan,Di, Chong-an,Liu, Yunqi. Engineering of the dielectric-semiconductor interface in organic field-effect transistors[J]. JOURNAL OF MATERIALS CHEMISTRY,2010,20(13):2599-2611.
APA Sun, Xiangnan,Di, Chong-an,&Liu, Yunqi.(2010).Engineering of the dielectric-semiconductor interface in organic field-effect transistors.JOURNAL OF MATERIALS CHEMISTRY,20(13),2599-2611.
MLA Sun, Xiangnan,et al."Engineering of the dielectric-semiconductor interface in organic field-effect transistors".JOURNAL OF MATERIALS CHEMISTRY 20.13(2010):2599-2611.
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