ICCAS OpenIR
A Facile, Low-Cost, and Scalable Method of Selective Etching of Semiconducting Single-Walled Carbon Nanotubes by a Gas Reaction
Zhang, Hongliang1; Liu, Yunqi1; Cao, Lingchao1; Wei, Dacheng1; Wang, Yu1; Kajiura, Hisashi2; Li, Yongming2; Noda, Kazuhiro2; Luo, Guangfu3; Wang, Lu3; Zhou, Jing3; Lu, Jing3; Gao, Zhengxiang3
2009-02-16
Source PublicationADVANCED MATERIALS
ISSN0935-9648
Volume21Issue:7Pages:813-+
AbstractA facile scalable and low-cost gas-treatment method for selectively etching semiconductor single-walled carbon nanotubes (SWNTs) is developed. Using SO(3) gas as the etchant at a temperature of 400 degrees C, semiconductor SWNTs can be selectively and efficiently removed, and after this gas treatment samples enriched with metallic SWNTs can be obtained.
DOI10.1002/adma.200800703
Indexed BySCI
Language英语
WOS IDWOS:000263737800013
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Cited Times:35[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/68616
Collection中国科学院化学研究所
Corresponding AuthorLiu, Yunqi
Affiliation1.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
2.Sony Corp, Mat Labs, Atsugi, Kanagawa 2430021, Japan
3.Peking Univ, Dept Phys, Mesoscop Phys Lab, Beijing 100871, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Hongliang,Liu, Yunqi,Cao, Lingchao,et al. A Facile, Low-Cost, and Scalable Method of Selective Etching of Semiconducting Single-Walled Carbon Nanotubes by a Gas Reaction[J]. ADVANCED MATERIALS,2009,21(7):813-+.
APA Zhang, Hongliang.,Liu, Yunqi.,Cao, Lingchao.,Wei, Dacheng.,Wang, Yu.,...&Gao, Zhengxiang.(2009).A Facile, Low-Cost, and Scalable Method of Selective Etching of Semiconducting Single-Walled Carbon Nanotubes by a Gas Reaction.ADVANCED MATERIALS,21(7),813-+.
MLA Zhang, Hongliang,et al."A Facile, Low-Cost, and Scalable Method of Selective Etching of Semiconducting Single-Walled Carbon Nanotubes by a Gas Reaction".ADVANCED MATERIALS 21.7(2009):813-+.
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