ICCAS OpenIR
Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate
Wang, Wei1,2; Shi, Jiawei2; Ma, Dongge1
2009-05-01
Source PublicationIEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN0018-9383
Volume56Issue:5Pages:1036-1039
AbstractOrganic thin-film transistor memory devices were realized by inserting a layer of nanoparticles (such as Ag or CaF(2)) between two Nylon 6 gate dielectrics as the floating gate. The transistor memories were fabricated on glass substrates by full thermal deposition. The transistors exhibit significant hysteresis behavior in current-voltage characteristics, due to the separated Ag or CaF(2) nanoparticle islands that act as charge trap centers. The mechanism of the transistor memory operation was discussed.
KeywordMemory Nanoparticle Floating Gate Organic Thin-film Transistor (Otft)
DOI10.1109/TED.2009.2016031
Indexed BySCI
Language英语
WOS IDWOS:000265712400046
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation statistics
Cited Times:26[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/68550
Collection中国科学院化学研究所
Corresponding AuthorWang, Wei
Affiliation1.Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
2.Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China
Recommended Citation
GB/T 7714
Wang, Wei,Shi, Jiawei,Ma, Dongge. Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2009,56(5):1036-1039.
APA Wang, Wei,Shi, Jiawei,&Ma, Dongge.(2009).Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate.IEEE TRANSACTIONS ON ELECTRON DEVICES,56(5),1036-1039.
MLA Wang, Wei,et al."Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate".IEEE TRANSACTIONS ON ELECTRON DEVICES 56.5(2009):1036-1039.
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