ICCAS OpenIR
Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics
Serbena, J. P. M.1,2; Huang, J. Y.2; Ma, D.2; Wang, Z. Y.3; Huemmelgen, I. A.1
2009-04-01
Source PublicationORGANIC ELECTRONICS
ISSN1566-1199
Volume10Issue:2Pages:357-362
AbstractIn this work we present a permeable base transistor consisting of a 60 nm thick N,N'diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine layer or a 40 nm thick 2,6-diphenyl-indenofluorene layer as the emitter, a CalAl/Ca multilayer as the metal base, and p-Si as collector. In the base, the Ca layers are 5 nm thick and the Al layer was varied between 10 and 40 nm. the best results obtained with a 20 nm thick layer. The devices present common-base current gain with both organic layer and silicon acting as emitter, but there is only observable common-emitter current gain when the organic semiconductor acts as emitter. The obtained common-emitter current gain, similar to 2, is independent on collector-emitter voltage, base current and organic emitter in a reasonable wide interval. Air exposure or annealing of the base is necessary to achieve these characteristics, indicating that an oxide layer is beneficial to proper device operation. (C) 2008 Elsevier B.V. All rights reserved.
KeywordCharacterization Permeable-base Hybrid Transistor Organic Semiconductor Vertical-architecture Transistor
DOI10.1016/j.orgel.2008.11.001
Indexed BySCI
Language英语
WOS IDWOS:000264269600021
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:15[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/68034
Collection中国科学院化学研究所
Corresponding AuthorHuemmelgen, I. A.
Affiliation1.Univ Fed Parana, Grp Organ Optoelect Devices, Dept Fis, BR-81531990 Curitiba, Parana, Brazil
2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Grad Sch, Changchun 130022, Peoples R China
3.Carleton Univ, Dept Chem, Ottawa, ON K1S 5B6, Canada
Recommended Citation
GB/T 7714
Serbena, J. P. M.,Huang, J. Y.,Ma, D.,et al. Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics[J]. ORGANIC ELECTRONICS,2009,10(2):357-362.
APA Serbena, J. P. M.,Huang, J. Y.,Ma, D.,Wang, Z. Y.,&Huemmelgen, I. A..(2009).Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics.ORGANIC ELECTRONICS,10(2),357-362.
MLA Serbena, J. P. M.,et al."Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics".ORGANIC ELECTRONICS 10.2(2009):357-362.
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