ICCAS OpenIR
Single-crystal-like organic heterojunction with 40 nm thick charge accumulation layers
Zhu, Feng; Yang, Jianbing; Song, De; Li, Chunhong; Yan, Donghang
2009-04-06
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume94Issue:14
AbstractSingle-crystal-like organic heterojunction films of copper phthalocyanine (CuPc) and copper-hexadecafluoro-phthalocyanine (F(16)CuPc) were fabricated by weak-epitaxy-growth method. The intrinsic properties of organic heterojunction were revealed through threshold voltage shift of field-effect transistors and measurement of single-crystal-like diodes. At both sides of the heterojunction interface 40 nm thick charge accumulation layers formed, which showed that the long carriers' diffusion length is due to the high crystallinity and low density of deep bulk traps of single-crystal-like films. This also indicated the electronic properties of organic heterojunction can be adjusted by controlling the growth condition.
KeywordCarrier Lifetime Epitaxial Growth Field Effect Transistors Organic Semiconductors Semiconductor Diodes Semiconductor Growth Semiconductor Heterojunctions Semiconductor Thin Films
DOI10.1063/1.3118581
Indexed BySCI
Language英语
WOS IDWOS:000265083700065
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:27[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/67382
Collection中国科学院化学研究所
Corresponding AuthorYan, Donghang
AffiliationChinese Acad Sci, State Key Lab Polymer Phys & Chem, Changchun Inst Appl Chem, Grad Sch, Changchun 130022, Peoples R China
Recommended Citation
GB/T 7714
Zhu, Feng,Yang, Jianbing,Song, De,et al. Single-crystal-like organic heterojunction with 40 nm thick charge accumulation layers[J]. APPLIED PHYSICS LETTERS,2009,94(14).
APA Zhu, Feng,Yang, Jianbing,Song, De,Li, Chunhong,&Yan, Donghang.(2009).Single-crystal-like organic heterojunction with 40 nm thick charge accumulation layers.APPLIED PHYSICS LETTERS,94(14).
MLA Zhu, Feng,et al."Single-crystal-like organic heterojunction with 40 nm thick charge accumulation layers".APPLIED PHYSICS LETTERS 94.14(2009).
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