Knowledge Management System Of Institute of Chemistry，CAS
| Ultrafast synthesis of Si nanowires by DC arc discharge method and morphology control | |
| Feng, J. J.1; Yan, P. X.1,2; Zhuo, R. F.1; Chen, J. T.1; Yan, D.1; Feng, H. T.1; Li, H. J.1 | |
| 2009-05-05 | |
| Source Publication | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| ISSN | 0925-8388 |
| Volume | 475Issue:1-2Pages:551-554 |
| Abstract | Silicon nanowires(SiNWs) have been synthesized by a facile direct current (DC) arc discharge method. The SiNWs have homogeneous diameters of 10-20 nm and lengths ranging from several ten nanometers to several microns. Each SiNW interconnects with a metal nickel as catalyst. Morphology control of the products can be easily achieved by adjusting the current and the voltage of the discharge. X-ray diffractometer (XRD), field-emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM) and Selected-area electron diffraction (SAED) were used to study the structures and the morphology of the SiNWs. SiNWs were polycrystalline, which confirmed by XRD and SAED. The formation mechanism of SiNWs generally attribute to the presence of Ni catalysts in the synthesis process of vapor-liquid-solid (VLS). (C) 2008 Elsevier B.V. All rights reserved. |
| Keyword | Nanostructured Materials Crystal Growth Catalysis Sem Tem |
| DOI | 10.1016/j.jallcom.2008.07.085 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000265911700116 |
| Publisher | ELSEVIER SCIENCE SA |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.iccas.ac.cn/handle/121111/67376 |
| Collection | 中国科学院化学研究所 |
| Corresponding Author | Yan, P. X. |
| Affiliation | 1.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China 2.CAS, Inst Chem & Phys, Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China |
| Recommended Citation GB/T 7714 | Feng, J. J.,Yan, P. X.,Zhuo, R. F.,et al. Ultrafast synthesis of Si nanowires by DC arc discharge method and morphology control[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2009,475(1-2):551-554. |
| APA | Feng, J. J..,Yan, P. X..,Zhuo, R. F..,Chen, J. T..,Yan, D..,...&Li, H. J..(2009).Ultrafast synthesis of Si nanowires by DC arc discharge method and morphology control.JOURNAL OF ALLOYS AND COMPOUNDS,475(1-2),551-554. |
| MLA | Feng, J. J.,et al."Ultrafast synthesis of Si nanowires by DC arc discharge method and morphology control".JOURNAL OF ALLOYS AND COMPOUNDS 475.1-2(2009):551-554. |
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