ICCAS OpenIR
Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene
Shi, Shengwei; Peng, Junbiao1; Lin, Jian2; Ma, Dongge2
2009-04-01
Source PublicationIEEE ELECTRON DEVICE LETTERS
ISSN0741-3106
Volume30Issue:4Pages:343-345
AbstractWe realized an organic electrical memory device with a simple structure based on single-layer pentacene film embedded between Al and ITO electrodes. The optimization of the thickness and deposition rate of pentacene resulted in a reliable device with an on/off current ratio as high as nearly 10(6), which was two orders of magnitude higher than previous results, and the storage time was more than 576 h. The current transition process is attributed to the formation and damage of the Interface dipole at different electric fields, in which the current conduction showed a transition from ohmic conductive current to Fowler-Nordheim tunneling current. After the transition from ON- to OFF-state, the device tended to remain in the OFF-State even when the applied voltage was removed, which indicated that the device was very promising for write-once read-many-times memory.
KeywordInterface Dipole On/off Ratio Pentacene Reliability Write Once Read Many Times (Worm)
DOI10.1109/LED.2009.2013976
Indexed BySCI
Language英语
WOS IDWOS:000264629100011
PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation statistics
Cited Times:11[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/66886
Collection中国科学院化学研究所
Corresponding AuthorShi, Shengwei
Affiliation1.S China Univ Technol, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Peoples R China
2.Chinese Acad Sci, State Key Lab Polymer Phys & Chem, Changchun Inst Appl Chem, Changchun 130022, Peoples R China
Recommended Citation
GB/T 7714
Shi, Shengwei,Peng, Junbiao,Lin, Jian,et al. Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene[J]. IEEE ELECTRON DEVICE LETTERS,2009,30(4):343-345.
APA Shi, Shengwei,Peng, Junbiao,Lin, Jian,&Ma, Dongge.(2009).Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene.IEEE ELECTRON DEVICE LETTERS,30(4),343-345.
MLA Shi, Shengwei,et al."Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene".IEEE ELECTRON DEVICE LETTERS 30.4(2009):343-345.
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