ICCAS OpenIR
Fused-Ring Pyrazine Derivatives for n-Type Field-Effect Transistors
Wang, Haifeng3; Wen, Yugeng3; Yang, Xiaodi; Wang, Ying; Zhou, Weiyi3; Zhang, Shiming3; Zhan, Xiaowei1; Liu, Yunqi; Shuai, Zhigang; Zhu, Daoben
2009-05-01
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
Volume1Issue:5Pages:1122-1129
AbstractThree new fused-ring pyrazine derivatives end-Functionalized with trifluoromethylphenyl groups have been synthesized. The effect of a fused-ring pyrazine core on the thermal, electronic, optical, thin Film morphology, and organic field-effect transistor (OFET) properties was investigated both experimentally and theoretically. Electrochemistry measurements and density functional theory calculations suggest that the pyrazine core plays a significant role in tuning the electron affinities OF these compounds. The optical absorption and fluorescence properties are also sensitive to the pyrazine core. The OFET devices based on the fused-ring pyrazine compounds exhibit electron mobilities as high as ca. 0.03 cm(2) V(-1) s(-1) under nitrogen, and their performance is sensitive to the pyrazine core. The larger pyrazine core leads to a lower LUMO level and lower reorganization energy, to more ordered thin film morphology with larger grain size, and finally to higher mobilities.
KeywordN-type Organic Semiconductor Field-effect Transistor Fused-ring Pyrazine Synthesis Density Functional Theory Structure-property Relationship
DOI10.1021/am900093p
Indexed BySCI
Language英语
WOS IDWOS:000268665200021
PublisherAMER CHEMICAL SOC
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Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/66636
Collection中国科学院化学研究所
Corresponding AuthorZhan, Xiaowei
Affiliation1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
2.Chinese Acad Sci, CAS Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China
3.Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China
Recommended Citation
GB/T 7714
Wang, Haifeng,Wen, Yugeng,Yang, Xiaodi,et al. Fused-Ring Pyrazine Derivatives for n-Type Field-Effect Transistors[J]. ACS APPLIED MATERIALS & INTERFACES,2009,1(5):1122-1129.
APA Wang, Haifeng.,Wen, Yugeng.,Yang, Xiaodi.,Wang, Ying.,Zhou, Weiyi.,...&Zhu, Daoben.(2009).Fused-Ring Pyrazine Derivatives for n-Type Field-Effect Transistors.ACS APPLIED MATERIALS & INTERFACES,1(5),1122-1129.
MLA Wang, Haifeng,et al."Fused-Ring Pyrazine Derivatives for n-Type Field-Effect Transistors".ACS APPLIED MATERIALS & INTERFACES 1.5(2009):1122-1129.
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