ICCAS OpenIR
Effect of dielectric layers on device stability of pentacene-based field-effect transistors
Di, Chong-an; Yu, Gui; Liu, Yunqi; Guo, Yunlong; Sun, Xiangnan; Zheng, Jian; Wen, Yugeng; Wang, Ying; Wu, Weiping; Zhu, Daoben
2009
Source PublicationPHYSICAL CHEMISTRY CHEMICAL PHYSICS
ISSN1463-9076
Volume11Issue:33Pages:7268-7273
AbstractWe report stable organic field-effect transistors (OFETs) based on pentacene. It was found that device stability strongly depends on the dielectric layer. Pentacene thin-film transistors based on the bare or polystyrene-modified SiO(2) gate dielectrics exhibit excellent electrical stabilities. In contrast, the devices with the octadecyltrichlorosilane (OTS)-treated SiO(2) dielectric layer showed the worst stabilities. The effects of the different dielectrics on the device stabilities were investigated. We found that the surface energy of the gate dielectric plays a crucial role in determining the stability of the pentacene thin film, device performance and degradation of electrical properties. Pentacene aggregation, phase transfer and film morphology are also important factors that influence the device stability of pentacene devices. As a result of the surface energy mismatch between the dielectric layer and organic semiconductor, the electronic performance was degraded. Moreover, when pentacene was deposited on the OTS-treated SiO(2) dielectric layer with very low surface energy, pentacene aggregation occurred and resulted in a dramatic decrease of device performance. These results demonstrated that the stable OFETs could be obtained by using pentacene as a semiconductor layer.
DOI10.1039/b902476j
Indexed BySCI
Language英语
WOS IDWOS:000268974700023
PublisherROYAL SOC CHEMISTRY
Citation statistics
Cited Times:26[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/66262
Collection中国科学院化学研究所
Corresponding AuthorYu, Gui
AffiliationChinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Di, Chong-an,Yu, Gui,Liu, Yunqi,et al. Effect of dielectric layers on device stability of pentacene-based field-effect transistors[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2009,11(33):7268-7273.
APA Di, Chong-an.,Yu, Gui.,Liu, Yunqi.,Guo, Yunlong.,Sun, Xiangnan.,...&Zhu, Daoben.(2009).Effect of dielectric layers on device stability of pentacene-based field-effect transistors.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,11(33),7268-7273.
MLA Di, Chong-an,et al."Effect of dielectric layers on device stability of pentacene-based field-effect transistors".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 11.33(2009):7268-7273.
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