ICCAS OpenIR
Ambipolar permeable metal-base transistor based on NPB/C-60 heterojunction
Huang, Jinying1; Yi, Mingdong1; Hummelgen, Ivo A.2; Ma, Dongge1
2009-02-01
Source PublicationORGANIC ELECTRONICS
ISSN1566-1199
Volume10Issue:1Pages:210-213
AbstractIn this paper, we report the fabrication of permeable metal-base organic transistors based on N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB)/C-60 heterojunction as both emitter and collector. By applying different polarities of voltage bias to the collector and the base, and input current to the emitter, the ambipolar behavior can be observed. The device demonstrates excellent common-base characteristics both in P-type and N-type modes with common-base current gains of 0.998 and 0.999, respectively. (C) 2008 Elsevier B.V. All rights reserved.
KeywordAmbipolar Organic Permeable Metal-base Transistor Heterojunction Air Stable
DOI10.1016/j.orgel.2008.10.019
Indexed BySCI
Language英语
WOS IDWOS:000262889400031
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:8[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/66148
Collection中国科学院化学研究所
Corresponding AuthorMa, Dongge
Affiliation1.Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
2.Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, Parana, Brazil
Recommended Citation
GB/T 7714
Huang, Jinying,Yi, Mingdong,Hummelgen, Ivo A.,et al. Ambipolar permeable metal-base transistor based on NPB/C-60 heterojunction[J]. ORGANIC ELECTRONICS,2009,10(1):210-213.
APA Huang, Jinying,Yi, Mingdong,Hummelgen, Ivo A.,&Ma, Dongge.(2009).Ambipolar permeable metal-base transistor based on NPB/C-60 heterojunction.ORGANIC ELECTRONICS,10(1),210-213.
MLA Huang, Jinying,et al."Ambipolar permeable metal-base transistor based on NPB/C-60 heterojunction".ORGANIC ELECTRONICS 10.1(2009):210-213.
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