ICCAS OpenIR
Synthesis of N-Doped Graphene by Chemical Vapor Deposition and Its Electrical Properties
Wei, Dacheng1,2; Liu, Yunqi1; Wang, Yu1; Zhang, Hongliang1,2; Huang, Liping1,2; Yu, Gui1
2009-05-01
Source PublicationNANO LETTERS
ISSN1530-6984
Volume9Issue:5Pages:1752-1758
AbstractTo realize graphene-based electronics, various types of graphene are required; thus, modulation of its electrical properties is of great importance. Theoretic studies show that intentional doping is a promising route for this goal, and the doped graphene might promise fascinating properties and widespread applications. However, there is no experimental example and electrical testing of the substitutionally doped graphene up to date. Here, we synthesize the N-doped graphene by a chemical vapor deposition (CVD) method. We find that most of them are few-layer graphene, although single-layer graphene can be occasionally detected. As doping accompanies with the recombination of carbon atoms into graphene in the CVD process, N atoms can be substitutionally doped into the graphene lattice, which is hard to realize by other synthetic methods. Electrical measurements show that the N-doped graphene exhibits an n-type behavior, indicating substitutional doping can effectively modulate the electrical properties of graphene. Our finding provides a new experimental instance of graphene and would promote the research and applications of graphene.
DOI10.1021/nl803279t
Indexed BySCI
Language英语
WOS IDWOS:000266157100005
PublisherAMER CHEMICAL SOC
Citation statistics
Cited Times:1924[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/66130
Collection中国科学院化学研究所
Corresponding AuthorLiu, Yunqi
Affiliation1.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
Recommended Citation
GB/T 7714
Wei, Dacheng,Liu, Yunqi,Wang, Yu,et al. Synthesis of N-Doped Graphene by Chemical Vapor Deposition and Its Electrical Properties[J]. NANO LETTERS,2009,9(5):1752-1758.
APA Wei, Dacheng,Liu, Yunqi,Wang, Yu,Zhang, Hongliang,Huang, Liping,&Yu, Gui.(2009).Synthesis of N-Doped Graphene by Chemical Vapor Deposition and Its Electrical Properties.NANO LETTERS,9(5),1752-1758.
MLA Wei, Dacheng,et al."Synthesis of N-Doped Graphene by Chemical Vapor Deposition and Its Electrical Properties".NANO LETTERS 9.5(2009):1752-1758.
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