ICCAS OpenIR
Iron nitride thin films deposited by chloride assisted plasma enhanced chemical vapour deposition: facile stoichiometry control and mechanism study
Zheng, Jie1; Yang, Rong1; Chen, Weimeng2; Xie, Lei1; Li, Xingguo1,3; Chen, Chinping2
2009-09-21
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
Volume42Issue:18
AbstractA facile method for iron nitride thin film preparation by the plasma enhanced chemical vapour deposition technique using FeCl(2), N(2) and H(2) as starting materials was developed. Iron nitride thin films with different phase structures, including three stoichiometric phases (gamma'-Fe(4)N, epsilon-Fe(3)N and zeta-Fe(2)N) and solid solutions in between could be prepared by this method. Variation of N(2) or H(2) flow, plasma power or FeCl(2) evaporation temperature allowed continuous adjustment of the film stoichiometry. Typical deposition rates of 10-20 nm min(-1) was achieved in typical conditions, much faster than that in most conventional low pressure thin film fabrication methods. This method was also successfully applied to prepare the nitrides of Mn, Co and Ni by simply replacing FeCl(2) with the corresponding metal chlorides. The mechanisms determining film stoichiometry and deposition rate were interpreted by a simple chemical model together with optical emission spectroscopy diagnostics of plasma.
DOI10.1088/0022-3727/42/18/185209
Indexed BySCI
Language英语
WOS IDWOS:000269557000037
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:12[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/66088
Collection中国科学院化学研究所
Corresponding AuthorLi, Xingguo
Affiliation1.Peking Univ, BNLMS, State Key Lab Rare Earth Mat Chem & Applicat, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
2.Peking Univ, Coll Phys, Beijing 100871, Peoples R China
3.Peking Univ, Coll Engn, Beijing 100871, Peoples R China
Recommended Citation
GB/T 7714
Zheng, Jie,Yang, Rong,Chen, Weimeng,et al. Iron nitride thin films deposited by chloride assisted plasma enhanced chemical vapour deposition: facile stoichiometry control and mechanism study[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009,42(18).
APA Zheng, Jie,Yang, Rong,Chen, Weimeng,Xie, Lei,Li, Xingguo,&Chen, Chinping.(2009).Iron nitride thin films deposited by chloride assisted plasma enhanced chemical vapour deposition: facile stoichiometry control and mechanism study.JOURNAL OF PHYSICS D-APPLIED PHYSICS,42(18).
MLA Zheng, Jie,et al."Iron nitride thin films deposited by chloride assisted plasma enhanced chemical vapour deposition: facile stoichiometry control and mechanism study".JOURNAL OF PHYSICS D-APPLIED PHYSICS 42.18(2009).
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