ICCAS OpenIR
Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator
Li, Chunhong; Pan, Feng; Wang, Xiujin; Wang, Lijuan; Wang, He; Wang, Haibo; Yan, Donghang
2009-08-01
Source PublicationORGANIC ELECTRONICS
ISSN1566-1199
Volume10Issue:5Pages:948-953
AbstractOrganic thin-film transistors (OTFTs) using high dielectric constant material tantalum pentoxide (Ta2O5) and benzocyclobutenone (BCBO) derivatives as double-layer insulator were fabricated. Three metals with different work function, including Al (4.3 eV), Cr (4.5 eV) and Au (5.1 eV), were employed as gate electrodes to study the correlation between work function of gate metals and hysteresis characteristics of OTFTs. The devices with low work function metal Al or Cr as gate electrode exhibited high hysteresis (about 2.5 V threshold voltage shift). However, low hysteresis (about 0.7 V threshold voltage shift) OTFTs were attained based on high work function metal Au as gate electrode. The hysteresis characteristics were studied by the repetitive gate voltage sweep of OTFTs, and capacitance-voltage (C-V) and trap loss-voltage (G(p)/omega-V) measurements of metal-insulator-semiconductor (MIS) devices. It is proved that the hysteresis characteristics of OTFTs are relative to the electron injection from gate metal to Ta2O5 insulator. The electron barrier height between gate metal and Ta2O5 is enhanced by using Au as gate electrode, and then the electron injection from gate metal to Ta2O5 is reduced. Finally, low hysteresis OTFTs were fabricated using Au as gate electrode. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
KeywordOrganic Thin-film Transistors Hysteresis Ta2o5 Insulator Work Function
DOI10.1016/j.orgel.2009.05.001
Indexed BySCI
Language英语
WOS IDWOS:000268368400030
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:15[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/65996
Collection中国科学院化学研究所
Corresponding AuthorYan, Donghang
AffiliationChinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
Recommended Citation
GB/T 7714
Li, Chunhong,Pan, Feng,Wang, Xiujin,et al. Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator[J]. ORGANIC ELECTRONICS,2009,10(5):948-953.
APA Li, Chunhong.,Pan, Feng.,Wang, Xiujin.,Wang, Lijuan.,Wang, He.,...&Yan, Donghang.(2009).Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator.ORGANIC ELECTRONICS,10(5),948-953.
MLA Li, Chunhong,et al."Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator".ORGANIC ELECTRONICS 10.5(2009):948-953.
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