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Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter
da Silva, Wilson J.1; Huemmelgen, Ivo A.1; Mello, Regina M. Q.2; Ma, Dongge3
2008-08-04
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951
Volume93Issue:5
AbstractWe demonstrate hybrid vertical architecture transistors that operate like metal-base transistors, using n-type silicon as the collector, sulfonated polyaniline as the base, and C(60) fullerene as the emitter. Electrical measurements suggest that the sulfonated polyaniline base effectively screens the emitter from electric field variations occurring in the collector leading to the metal-base transistor behavior. These devices operate at low voltages and show common-emitter current gain equal to 8, which is independent of the base current up to values of similar to 1.5 mu A and constant at collector voltages between 1 and 5 V.
DOI10.1063/1.2967731
Indexed BySCI
Language英语
WOS IDWOS:000258335900075
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:12[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/65486
Collection中国科学院化学研究所
Corresponding AuthorHuemmelgen, Ivo A.
Affiliation1.Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, PR, Brazil
2.Univ Fed Parana, Dept Quim, BR-81531990 Curitiba, PR, Brazil
3.Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
Recommended Citation
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da Silva, Wilson J.,Huemmelgen, Ivo A.,Mello, Regina M. Q.,et al. Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter[J]. APPLIED PHYSICS LETTERS,2008,93(5).
APA da Silva, Wilson J.,Huemmelgen, Ivo A.,Mello, Regina M. Q.,&Ma, Dongge.(2008).Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter.APPLIED PHYSICS LETTERS,93(5).
MLA da Silva, Wilson J.,et al."Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter".APPLIED PHYSICS LETTERS 93.5(2008).
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