ICCAS OpenIR
Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors
Yu, Shunyang; Yi, Mingdong; Ma, Dongge
2008-03-31
Source PublicationTHIN SOLID FILMS
ISSN0040-6090
Volume516Issue:10Pages:3346-3349
AbstractCopper phthalocyanine organic thin-film transistors (OTFTs) were fabricated with top-gate geometry and the effects of different gate dielectrics on the transport proper-ties in OTFTs were studied. The mobility was found to be gate voltage dependent and the results showed that besides the charge density in the accumulation layer, the energetic disorder induced by gate dielectrics played an important role in determining the field-effect mobility in OTFTs. (c) 2007 Elsevier B.V. All rights reserved.
KeywordOrganic Transistor Charge Transport Energetic Disorder
DOI10.1016/j.tsf.2007.11.014
Indexed BySCI
Language英语
WOS IDWOS:000254634600087
PublisherELSEVIER SCIENCE SA
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/65442
Collection中国科学院化学研究所
Corresponding AuthorMa, Dongge
AffiliationChinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
Recommended Citation
GB/T 7714
Yu, Shunyang,Yi, Mingdong,Ma, Dongge. Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors[J]. THIN SOLID FILMS,2008,516(10):3346-3349.
APA Yu, Shunyang,Yi, Mingdong,&Ma, Dongge.(2008).Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors.THIN SOLID FILMS,516(10),3346-3349.
MLA Yu, Shunyang,et al."Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors".THIN SOLID FILMS 516.10(2008):3346-3349.
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