ICCAS OpenIR
Patterned graphene as source/drain electrodes for bottom-contact organic field-effect transistors
Di, Chong-an1,2; Wei, Dacheng1,2; Yu, Gui1; Liu, Yunqi1; Guo, Yunlong1,2; Zhu, Daoben1
2008-09-03
Source PublicationADVANCED MATERIALS
ISSN0935-9648
Volume20Issue:17Pages:3289-+
AbstractGraphene, which is a basic building, block of graphite, fullerene, and carbon nanotubes, is patterned effectively by a simple approach involving vapor deposition on Cu or Ag electrodes that were patterned on a highly n-doped silicon wafer with a thermally oxidized SiO2 dielectric layer (see figure). The patterned graphene could serve as excellent bottom-contact electrodes for high-performance organic field-effect transistors.
DOI10.1002/adma.200800150
Indexed BySCI
Language英语
WOS IDWOS:000259205400018
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Cited Times:312[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/65390
Collection中国科学院化学研究所
Corresponding AuthorYu, Gui
Affiliation1.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
Recommended Citation
GB/T 7714
Di, Chong-an,Wei, Dacheng,Yu, Gui,et al. Patterned graphene as source/drain electrodes for bottom-contact organic field-effect transistors[J]. ADVANCED MATERIALS,2008,20(17):3289-+.
APA Di, Chong-an,Wei, Dacheng,Yu, Gui,Liu, Yunqi,Guo, Yunlong,&Zhu, Daoben.(2008).Patterned graphene as source/drain electrodes for bottom-contact organic field-effect transistors.ADVANCED MATERIALS,20(17),3289-+.
MLA Di, Chong-an,et al."Patterned graphene as source/drain electrodes for bottom-contact organic field-effect transistors".ADVANCED MATERIALS 20.17(2008):3289-+.
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