ICCAS OpenIR
Thermochemical hole burning performance of TCNQ-based charge transfer complexes with different electrical conductivities
Zhou, Wei; Lin, Feng; Ren, Liang; Huang, Xiaomin; Ran, Chunbo; Ding, Shuai; Peng, Hailin; Liu, Zhongfan
2008-06-11
Source PublicationNANOTECHNOLOGY
ISSN0957-4484
Volume19Issue:23
AbstractThermochemical hole burning (THB) memory is an ultrahigh density data storage technique based on the scanning tunneling microscope (STM). It utilizes the STM current to induce localized thermochemical decomposition of TCNQ-based charge transfer (CT) complexes and sequentially create nanometer-sized holes as information bits. The writing reliability and hole size depend on many factors, including the properties of the storage materials and the STM tip, and the tip-sample distance and interaction. We have found here that for the high electrical conductivity CT complexes, the hole size (represented by volume) monotonically decreases with the tip displacement increasing in the direction of leaving the sample; but for low electrical conductivity samples, the hole size first increases and then decreases with the tip displacement increasing in the same direction. Subsequent experiments and analyses indicate that the surface deformation induced by the tip-sample interaction and the heat conduction of the metal tip account for such a unique phenomenon.
DOI10.1088/0957-4484/19/23/235303
Indexed BySCI
Language英语
WOS IDWOS:000255662700011
PublisherIOP PUBLISHING LTD
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/65160
Collection中国科学院化学研究所
Corresponding AuthorLiu, Zhongfan
AffiliationPeking Univ, Coll Chem & Mol Engn, State Key Lab Struct Chem Unstable & Stable Speci, BLNMS,CNST, Beijing 100871, Peoples R China
Recommended Citation
GB/T 7714
Zhou, Wei,Lin, Feng,Ren, Liang,et al. Thermochemical hole burning performance of TCNQ-based charge transfer complexes with different electrical conductivities[J]. NANOTECHNOLOGY,2008,19(23).
APA Zhou, Wei.,Lin, Feng.,Ren, Liang.,Huang, Xiaomin.,Ran, Chunbo.,...&Liu, Zhongfan.(2008).Thermochemical hole burning performance of TCNQ-based charge transfer complexes with different electrical conductivities.NANOTECHNOLOGY,19(23).
MLA Zhou, Wei,et al."Thermochemical hole burning performance of TCNQ-based charge transfer complexes with different electrical conductivities".NANOTECHNOLOGY 19.23(2008).
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