ICCAS OpenIR
Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage
Feng, Chengang2,3; Yi, Mingdong2; Yu, Shunyang2; Hummelgen, Ivo A.1; Zhang, Tong3; Ma, Dongge2
2008-04-01
Source PublicationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
ISSN1533-4880
Volume8Issue:4Pages:2037-2043
AbstractWe demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V(2)O(5)) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage. The addition of two Ca layers, leading to a Ca/Ag/Ca base, allowed to obtain a large value of common-emitter current gain, but still retaining the permeable-base transistor character. This kind of vertical devices produced by simple technologies offer attractive new possibilities due to the large variety of available molecular semiconductors, opening the possibility of incorporating new functionalities in silicon-based devices.
KeywordPermeable-base Transistor Organic Semiconductor Hybrid Transistor
DOI10.1166/jnn.2008.054
Indexed BySCI
Language英语
WOS IDWOS:000255790400055
PublisherAMER SCIENTIFIC PUBLISHERS
Citation statistics
Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.iccas.ac.cn/handle/121111/65124
Collection中国科学院化学研究所
Corresponding AuthorHummelgen, Ivo A.
Affiliation1.Univ Fed Parana, Grp Organ Optoelect Devices, Dept Fis, BR-81531990 Curitiba, Parana, Brazil
2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Grad Sch, Changchun 130022, Peoples R China
3.Jilin Univ, Natl Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
Recommended Citation
GB/T 7714
Feng, Chengang,Yi, Mingdong,Yu, Shunyang,et al. Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2008,8(4):2037-2043.
APA Feng, Chengang,Yi, Mingdong,Yu, Shunyang,Hummelgen, Ivo A.,Zhang, Tong,&Ma, Dongge.(2008).Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,8(4),2037-2043.
MLA Feng, Chengang,et al."Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 8.4(2008):2037-2043.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Feng, Chengang]'s Articles
[Yi, Mingdong]'s Articles
[Yu, Shunyang]'s Articles
Baidu academic
Similar articles in Baidu academic
[Feng, Chengang]'s Articles
[Yi, Mingdong]'s Articles
[Yu, Shunyang]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Feng, Chengang]'s Articles
[Yi, Mingdong]'s Articles
[Yu, Shunyang]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.